International Conference on Silicon Carbide and Related Materials 2009
Program
Time-table
This is the Technical Session Time-table of ICSCRM 2009. Here you can do the following:
- Hold the mouse cursor above a session, and you will see a tool tip with the session number, topic and time in bigger letters.
- If you are logged on in the MyICSCRM system, you can see the schedule of the talks or posters by clicking onto the sessions.
Plenary Speakers
- Tsunenobu Kimoto, Kyoto University, Japan: Defect Control in Growth and Processing of 4H-SiC for Power Device Applications
- Robert Stahlbush, Naval Research Laboratory, USA: A Pictorial Tour of Basal Plane Dislocations and Other Extended Defects in SiC Epitaxy
- Albert Wick, Siemens AG, Germany
Invited Speakers
- Juergen Biela, ETH Zurich: SiC vs. Si – Evaluation of Potentials for Performance Improvement of Power Electronics Converter Systems by SiC Power Semiconductors
- Christian Brylinski, Université Claude Bernard Lyon I: Active Devices for Power Electronics : SiC vs III-N compounds
- Joshua Caldwell, Naval Research Laboratory: Colorful, Misbehaving Defects: On the Luminescence and Driving Force of Stacking Fault Motion in SiC
- T. Paul Chow, RPI: SiC and GaN MOS Interfaces - Similarities and Differences
- Salvatore Coffa, STMicroelectronics: SiC power devices fabrication in a standard industrial environment
- Gabriel Ferro, Université Claude Bernard Lyon 1: Overview of 3C-SiC crystalline growth
- Kenji Fukuda, AIST: Influence of processing and material defects on electrical characteristics of SiC-SBDs and SiC-MOSFETs
- D. Kurt Gaskill, US Naval Research Laboratory: GHz Devices from Epitaxial Graphene on SiC
- Shinsuke Harada, AIST: Isotropic channel mobility in UMOSFETs on 4H-SiC C-face with vicinal off-angle
- Tetsuo Hatakeyama, Toshiba Corporation: Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-area Gate Oxide on the C-face of 4H-SiC
- Christian Hecht, SiCED Electronics Development: High-performance multi-wafer SiC epitaxy - First results of using a 10x100mm reactor
- Hiroyuki Kageshima, NTT Basic Research Laboratories: Study of epitaxial graphene growth using LEEM and first-principles
- Paul Klein, Naval Research Laboratory: Identification of Defects Limiting the Carrier Lifetime in n- Epitaxial Layers of 4H-SiC
- Dirk Kranzer, Fraunhofer ISE: System Improvements of Photovoltaic Inverters with SiC-Transistors
- Michael Krieger, University of Erlangen-Nuremberg: Detection and Electrical Characterization of Defects at the SiO<sub>2</sub>/4H-SiC Interface
- Takashi Nakamura, ROHM CO., LTD: SiC Schottky Diodes and MOSFETs for Automotive Applications
- Mikael Östling, KTH: Design, performance and reliability of SiC power BJTs
- Christian Riedl, MPI for Solid State Research: Hydrogen Intercalation below Epitaxial Graphene on SiC(0001)
- Sei-Hyung Ryu, Cree, Inc: Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs
- Thomas Straubinger, SiCrystal AG: High Quality 100mm 4H-SiC Substrates with Low Resistivity
- Hidekazu Tsuchida, CRIEPI: Low-pressure fast growth and characterization of 4H-SiC epilayers
- Jawad Ul Hassan, : Growth and properties of SiC on-axis homoepitaxal layers
- Heiko B. Weber, Universität Erlangen-Nürnberg: Transport properties of single-layer epitaxial graphene on 6H-SiC (0001)
- Tsvetanka Zheleva, US Army Research Laboratory: Mechanisms Limiting the Inversion Layer Mobility in the 4H-SiC MOS Devices
- Marcin Zielinski, NOVASiC: Recent advances in surface preparation of silicon carbide and other wide band gap materials
Further information
The whole program of the conference with all oral and poster presentations can be found in the MyICSCRM area. Access to the abstracts and manuscripts will be granted for participants of ICSCRM 2009 only.