Lehrstuhl für Angewandte Physik (LAP)
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Publikationen

Jahre: alle, 2017, 2016, 2015, 2014, 2013, 2012, 2011, 2010, 2009, 2008, 2007, 2006, 2005, 2004, 2003, 2002, 2001, 2000, 1999, 1998, 1997, 1996, 1995

2017

S. Leitherer, P. Brana Coto, K. Ullmann, H. B. Weber, M. Thoss:
Charge Transport in C60-based Single-Molecule Junctions with Graphene Electrodes,
Nanoscale 9, 7217-7226 (2017) [doi: 10.1039/C7NR00170C]

P. Vecera, S. Eigler, M. Kolesnik-Gray, V. Krstic, A. Vierck, J. Maultzsch, R. Schäfer, F. Hauke, A. Hirsch:
Degree of functionalisation dependence of individual Raman intensities in covalent graphene derivatives,
Scientific Reports 7, 45165 (2017) [doi: 10.1038/srep45165]

J. Caridad, S. Winters, D. McCloskey, G. Duesberg, J. Donegan, V. Krstic:
Hot volumes for highly enhanced and reproducible SERS detection in weakly-coupled metallic nanohelices,
Scientific Reports 7, 45548 (2017) [doi: 10.1038/srep45548]

F. Kißlinger, C. Ott, H. B. Weber:
Origin of nonsaturating linear magnetoresistivity,
Physical Review B 95, 024204 (2017) [doi: 10.1103/PhysRevB.95.024204]

2016

J. M. Caridad, S. Connaughton, C. Ott, H. B. Weber, V. Krstic:
An electrical analogy to Mie scattering,
nature communications 7 (2016) [doi: 10.1038/ncomms12894]

S. Connaughton, M. Kolesnik-Gray, R. Hobbs, O. Lotty, J. D. Holmes, V. Krstic:
Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires,
Beilstein J. Nanotechnol 7, 1284-1288 (2016)

M. Krieger, M. Rühl, T. Sledziewski, G. Ellrott, T. Palm, H. B. Weber, M. Bockstedte:
Doping of 4H-SiC with group IV elements,
Materials Science Forum 858, 301-307 (2016) [doi: 10.4028/www.scientific.net/MSF.858.301]

T. Sledziewski, M. Vivona, K. Alassaad, P. Kwasnicki, R. Arvinte, S. Beljakowa, H. B. Weber, F. Giannazzo, H. Peyre, V. Souliere, T. Chassagne, M. Zielinski, S. Juillaguet, G. Ferro, F. Roccaforte, M. Krieger:
Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition,
J. Appl. Phys. 120, 205701 (2016) [doi: 10.1063/1.4967301]

M. Vivona, P. Fiorenza, T. Sledziewski, M. Krieger, T. Chassagne, M. Zielinski, F. Roccaforte:
Electrical properties of SiO2/SiC interfaces on 2°-off axis 4H-SiC epilayers,
Applied Surface Science 364, 892-895 (2016) [doi: 10.1016/j.apsusc.2015.12.006]

M. Kolesnik-Gray, G. Collins, J. D. Holmes, V. Krstic:
Fingerprints of a size-dependent crossover in the dimensionality of electronic conduction in Au-seeded Ge nanowires,
Beilstein J. Nanotechnol. 7, 1574-1578 (2016)

G. A. Santamaría-Botello, L. E. García Muñoz, F. Sedlmeir, S. Preu, D. Segovia-Vargas, K. Atia Abdalmalak, S. Llorente Romano, A. García Lampérez, S. Malzer, G. H. Döhler, H. G. L. Schwefel, H. B. Weber:
Maximization of the optical intra-cavity power of whispering-gallery mode resonators via coupling prism,
Optics Express 22, 26503-26514 (2016) [doi: 10.1364/OE.24.026503]

G. Pobegen, J. Weiße, M. Hauck, H. B. Weber, M. Krieger:
On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs,
Materials Science Forum 858, 473-476 (2016) [doi: 10.4028/www.scientific.net/MSF.858.473]

T. Sledziewski, H. B. Weber, M. Krieger:
Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces,
Materials Science Forum 858, 697-700 (2016) [doi: 10.4028/www.scientific.net/MSF.858.697]

M. Vivona, P. Fiorenza, T. Sledziewski, A. Gkanatsiou, M. Krieger, T. Chassagne, M. Zielinski, F. Roccaforte:
Processing and characterization of MOS capacitors fabricated on 2°-off axis 4H-SiC epilayers,
Materials Science Forum 858, 663-666 (2016) [doi: 10.4028/www.scientific.net/MSF.858.663]

R. Schaefer, K. Weber, F. Hauke, V. Krstic, B. Meyer, A. Hirsch:
Substrate-modulated reductive graphene functionalization,
Angew. Chem. Int. Ed. 55, 14858–14862 (2016)

2015

J. J. Gough, D. McCloskey, J. M. Caridad, V. Krstic, M. Müller, N. Gaponik, A. L. Bradley:
Chiral Ag Nanostructure Arrays as Optical Antennas,
IEEE Xplore, Metamaterials, 88 (2015)

A. Mikhaylov, T. Sledziewski, A. Afanasyev, V. Luchinin, S. Reshanov, A. Schöner, M. Krieger:
Effect of phosphorus implantation prior to oxidation on electrical properties of thermally grown SiO2/4H-SiC MOS structures,
Material Science Forum 806, 133-138 (2015) [doi: 10.4028/www.scientific.net/MSF.806.133]

J. M. Caridad, D. McCloskey, F. Rossella, V. Bellani, J. Donegan, V. Krstic:
Effective Wavelength Scaling of and Damping in Plasmonic Helical Antennae,
ACS Photonics, 675–679 (2015) [doi: 10.1021/acsphotonics.5b00076]

F. Giannazzo, S. Hertel, A. Albert, G. Fisichella, A. La Magna, F. Roccaforte, M. Krieger, H. B. Weber:
Electrical properties of the hydrogen intercalated epitaxial graphene/SiC interface investigated by nanoscale current mapping,
Material Science Forum 821-823, 929-932 (2015) [doi: 10.4028/www.scientific.net/MSF.821-823.929]

C. Sorger, S. Hertel, J. Jobst, C. Steiner, K. Meil, K. Ullmann, A. Albert, Y. Wang, M. Krieger, J. Ristein, S. Maier, H. B. Weber:
Gateless patterning of epitaxial graphene by local intercalation,
Nanotechnology 26, 025302 (2015) [doi: 10.1088/0957-4484/26/2/025302]

S. Hertel, A. Finkler, M. Krieger, H. B. Weber:
Graphene Ohmic Contacts to n-type Silicon Carbide (0001),
Material Science Forum 821-823, 933-936 (2015) [doi: 10.4028/www.scientific.net/MSF.821-823.933]

M. Kolesnik-Gray, S. Hansel, M. Boese, V. Krstic:
Impact of surface and twin-boundary scattering on the electrical transport properties of Ag nanowires,
Solid State Communications 202, 48-51 (2015) [doi: 10.1016/j.ssc.2014.11.006]

M. Kolesnik-Gray, C. Sorger, S. Biswas, J. D. Holmes, H. B. Weber, V. Krstic:
In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices,
Applied Physics Letters 106, 233109 (2015) [doi: 10.1063/1.4922527]

F. Kißlinger, C. Ott, C. Heide, E. Kampert, B. Butz, E. Spiecker, S. Shallcross, H. B. Weber:
Linear magnetoresistance in mosaic-like bilayer graphene,
Nature Physics 11, 650-653 (2015) [doi: 10.1038/nphys3368]

J. Kautz, J. Jobst, C. Sorger, R. M. Tromp, H. B. Weber, S. J. van der Molen:
Low-Energy Electron Potentiometry: Contactless Imaging of Chage Transport on the Nanoscale,
Scientific Reports, 13604 (2015) [doi: 10.1038/srep13604]

T. Sledziewski, G. Ellrott, W. Rösch, H. B. Weber, M. Krieger:
Reduction of implantation-induced point defects by germanium ions in n-type 4H-SiC,
Material Science Forum 821-823, 347-350 (2015) [doi: 10.4028/www.scientific.net/MSF.821-823.347]

K. Ullmann, P. B. Coto, S. Leitherer, A. Molina-Ontoria, M. Nazario, M. Thoss, H. B. Weber:
Single-Molecule Junctions with Epitaxial Graphene Nanoelectrodes,
Nano Lett. 15, 3512-3518 (2015) [doi: 10.1021/acs.nanolett.5b00877]

C. Sorger, S. Preu, J. Schmidt, S. Winnerl, Y. V. Bludov, N. M. R. Peres, M. I. Vasilevskiy, H. B. Weber:
Terahertz response of patterned epitaxial graphene,
New Journal of Physics 17, 053045 (2015) [doi: 10.1088/1367-2630/17/5/053045]

S. Connaughton, R. Hobbs, O. Lotty, J. D. Holmes, V. Krstic:
Variation of self-seeded germanium nanowire electronic device functionality due to synthesis condition determined surface states,
Advanced Materials Interfaces 2, 1400469 (2015) [doi: 10.1002/admi.201400469]

2014

T. Sledziewski, S. Beljakowa, K. Alassaad, P. Kwasnicki, R. Arvinte, S. Juillaguet, M. Zielinski, V. Souliere, G. Ferro, H. B. Weber, M. Krieger:
Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition,
Materials Science Forum 778-780, 261-264 (2014) [doi: 10.4028/www.scientific.net/MSF.778-780.261]

J. M. Caridad, D. McCloskey, J. F. Donegan, V. Krstic:
Controllable growth of metallic nano-helices at room temperature conditions,
Applied Physics Letters 105, 233114 (2014) [doi: 10.1063/1.4904091]

C. Schinabeck, R. Haertle, H. B. Weber, M. Thoss:
Current noise in single-molecule junctions induced by electronic-vibrational coupling,
Physical Review B 90 (2014) [doi: 10.1103/PhysRevB.90.075409]

B. Butz, C. Dolle, F. Niekiel, K. Weber, D. Waldmann, H. B. Weber, B. Meyer, E. Spiecker:
Dislocations in bilayer graphene,
Nature 505, 533-537 (2014) [doi: 10.1038/nature12780]

S. Rönsch, S. Hertel, S. Reshanov, A. Schoener, M. Krieger, H. B. Weber:
Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene / 6H-SiC Field Effect Transistors,
Materials Science Forum 778-780, 436-439 (2014) [doi: 10.4028/www.scientific.net/MSF.778-780.436]

F. Giannazzo, S. Hertel, A. Albert, A. La Magna, F. Roccaforte, M. Krieger, H. B. Weber:
Electrical nanocharacterization of epitaxial graphene/silicon carbide Schottky contacts,
Materials Science Forum 778-780, 1142-1145 (2014) [doi: 10.4028/www.scientific.net/MSF.778-780.1142]

E. Bayaya, D. Waldmann, M. Krieger, H. B. Weber:
Epitaxial graphene as an electrode material: a transistor testbed for organic and all-carbon semiconductors,
RSC Adv. 4, 34474 (2014) [doi: 10.1039/c4ra06131d]

S. Rönsch, V. Sizov, T. Yagi, S. Murad, L. Groh, S. Lutgen, M. Sickmoeller, M. Krieger, H. B. Weber:
Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon,
Materials Science Forum 778-780, 1180-1184 (2014) [doi: 10.4028/www.scientific.net/MSF.778-780.1180]

S. Hertel, M. Krieger, H. B. Weber:
Monolithic circuits with epitaxial graphene/silicon carbide transistors,
Phys. Status Solidi RRL 8, 688-691 (2014) [doi: 10.1002/pssr.201409171]

C. Braunsmann, V. Prucker, T. E. Schäffer:
Optical Knife-Edge displacement sensor for high-speed atomic force microscopy,
Appl. Phys. Lett. 104, 103101 (2014) [doi: 10.1063/1.4868043]

S. Beljakowa, M. Hauck, M. Bockstedte, F. Fromm, M. Hundhausen, H. Nagasawa, H. B. Weber, G. Pensl, M. Krieger:
Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures,
Materials Science Forum 778-780, 265-268 (2014) [doi: 10.4028/www.scientific.net/MSF.778-780.265]

P. Wehrfritz, F. Fromm, S. Malzer, T. Seyller:
Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate,
Journal of PhysicsD: Applied Physics 47, 305103 (5pp) (2014) [doi: 10.1088/0022-3727/47/30/305103]

T. Sledziewski, A. Mikhaylov, S. Reshanov, A. Schöner, H. B. Weber, M. Krieger:
Reduction of density of 4H-SiC / SiO2 interface traps by pre-oxidation phosphorus implantation,
Materials Science Forum 778-780, 575-578 (2014) [doi: 10.4028/www.scientific.net/MSF.778-780.575]

2013

A. Rivera-Lavado, L. E. Garcia-Munoz, G. H. Döhler, S. Malzer, S. Preu, S. Bauerschmidt, J. Montero-de-Paz, E. Ugarte-Munoz, B. Andres-Garcia, V. Izquierdo-Bermudez, D. Segovia-Vargas:
Arrays and new antenna topologies for increasing THz power using photomixers,
J. Infrared Milli. THz Waves 34, 97-108 (2013)

M. Kolesnik-Gray, T. Lutz, G. Collins, S. Biswas, J. D. Holmes, V. Krstic:
Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires,
Appl. Phys. Lett. 103, 153101 (2013) [doi: 10.1063/1.4821996]

C. Strenger, V. Uhnevionak, A. Burenkov, A. Bauer, V. Mortet, E. Bedel-Pereira, F. Cristiano, M. Krieger, H. Ryssel:
Correlation of Interface Characteristics to Electron Mobility in Channel-implanted 4H-SiC MOSFETs,
Materials Science Forum 740-742, 537-540 (2013) [doi: 10.4028/www.scientific.net/MSF.740-742.537]

J. Jobst, F. Kißlinger, H. B. Weber:
Detection of the Kondo effect in the resistivity of graphene: Artifacts and strategies,
Physical Review B 88, 155412 (2013) [doi: 10.1103/PhysRevB.88.155412]

J. Weber, S. Beljakowa, H. B. Weber, G. Pensl, B. Zippelius, T. Kimoto, M. Krieger:
Determination of the Electrical Capture Process of the EH6-Center in n-type 4H-SiC,
Materials Science Forum 740-742, 377-380 (2013) [doi: 10.4028/www.scientific.net/MSF.740-742.377]

S. Rönsch, V. Sizov, T. Yagi, S. Murad, L. Groh, S. Lutgen, M. Krieger, H. B. Weber:
Impact of AlN spacer on electron mobility of AlGaN/AlN/GaN structures on silicon,
Materials Science Forum 740-742, 502-505 (2013) [doi: 10.4028/www.scientific.net/MSF.740-742.502]

S. Shivaraman, J. Jobst, D. Waldmann, H. B. Weber, M. G. Spencer:
Raman spectroscopy and electrical transport studies of free-standing epitaxial graphene: Evidence of an AB-stacked bilayer,
Phys. Rev. B 87, 195425 (2013) [doi: 10.1103/PhysRevB.87.195425]

D. Waldmann, B. Butz, S. Bauer, J. M. Englert, J. Jobst, K. Ullmann, F. Fromm, M. Ammon, M. Enzelberger, A. Hirsch, S. Maier, P. Schmuki, T. Seyller, E. Spiecker, H. B. Weber:
Robust Graphene Membranes in a Silicon Carbide Frame,
ACS Nano April, 441 (2013) [doi: 10.1021/nn401037c]

S. Wagner, F. Kißlinger, S. Ballmann, F. Schramm, R. Chandrasekar, T. Bodenstein, O. Fuhr, D. Secker, K. Fink, M. Ruben, H. B. Weber:
Switching of a coupled spin pair in a single-molecule junction,
Nature Nanotechnology 8, 575-579 (2013) [doi: 10.1038/nnano.2013.133]

S. Ballmann, W. Hieringer, R. Härtle, P. B. Coto, M. R. Bryce, A. Görling, M. Thoss, H. B. Weber:
The role of vibrations in single-molecule charge transport: A case study of oligoynes with pyridine anchor groups,
physica status solidi (b) (2013) [doi: 10.1002/pssb.201350025]

S. Preu, M. Mittendorff, S. Winnerl, H. Lu, A. Gossard, H. B. Weber:
Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals,
Optics Express 21, 17941-17950 (2013) [doi: 10.1364/OE.21.017941]

2012

S. Preu, M. Mittendorff, H. Lu, H. B. Weber, S. Winnerl, A. C. Gossard:
1550 nm ErAs:In(Al)GaAs large area photoconductive emitters,
Appl. Phys. Lett. 101, 101105 (2012) [doi: 10.1063/1.4750244]

S. Ballmann, H. B. Weber:
An electrostatic gate for mechanically controlled single-molecule junctions,
New Journal of Physics 14, 123028 (2012) [doi: 10.1088/1367-2630/14/12/123028]

S. Preu, S. Kim, R. Verma, P. G. Burke, M. S. Sherwin, A. C. Gossard:
An improved model for non-resonant terahertz detection in field-effect transistors,
Journal of Applied Physics 111, 024502 (2012) [doi: 10.1063/1.3676211]

F. Krach, S. Hertel, D. Waldmann, J. Jobst, M. Krieger, S. Reshanov, A. Schöner, H. B. Weber:
A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel,
Applied Physics Letters 100, 122102 (2012) [doi: 10.1063/1.3695157]

B. Zippelius, M. Hauck, S. Beljakowa, H. B. Weber, M. Krieger, H. Nagasawa, H. Uchida, G. Pensl, A. Schöner:
Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length,
Materials Science Forum 717-720, 1113-1116 (2012) [doi: 10.4028/www.scientific.net/MSF.717-720.1113]

S. Preu, H. Lu, M. S. Sherwin, A. C. Gossard:
Detection of nanosecond-scale, high power THz pulses with a field effect transistor,
Rev. Sci. Instrum 83, 053101 (2012)

J. Jobst, D. Waldmann, I. V. Gornyi, A. D. Mirlin, H. B. Weber:
Electron-Electron Interaction in the Magnetoresistance of Graphene,
Physical Review Letters 108, 106601 (2012) [doi: 10.1103/PhysRevLett.108.106601]

H. B. Weber, M. Krieger, S. Hertel, F. Krach, J. Jobst, D. Waldmann:
Electronic device (2012)

H. B. Weber, M. Krieger, S. Hertel, F. Krach, J. Jobst, D. Waldmann:
Electronic device (2012)

G. Dyer, S. Preu, G. Aizin, J. Mikalopas, A. Grine, J. Reno, J. Hensley, N. Vinh, A. Gossard, M. Sherwin, S. Allen, E. Shaner:
Enhanced performance of resonant sub-terahertz detection in a plasmonic cavity,
Applied Physics Letters 100, 083506 (2012)

S. Ballmann, R. Härtle, P. B. Coto, M. Elbing, M. Mayor, M. R. Bryce, M. Thoss, H. B. Weber:
Experimental Evidence for Quantum Interference and Vibrationally Induced Decoherence in Single-Molecule Junctions,
Phys. Rev. Lett. 109, 056801 (2012) [doi: 10.1103/PhysRevLett.109.056801]

D. Waldmann, J. Jobst, F. Speck, T. Seyller, M. Krieger, H. B. Weber:
Gated Epitaxial Graphene Devices,
Materials Science Forum 717-720, 675-678 (2012) [doi: 10.4028/www.scientific.net/MSF.717-720.675]

H. B. Weber, S. Hertel, M. Krieger, F. Krach, J. Jobst, D. Waldmann:
Halbleiterbauelement (2012)

D. Waldmann, J. Jobst, F. Fromm, F. Speck, T. Seyller, M. Krieger, H. B. Weber:
Implanted bottom gate for epitaxial graphene on silicon carbide,
Journal of Physics 45, 154006 (2012) [doi: 10.1088/0022-3727/45/15/154006]

G. Dyer, G. Aizin, S. Preu, N. Q. Vinh, S. J. Allen, J. Reno, E. Shaner:
Inducing an Incipient Terahertz Finite Plasmonic Crystal in Coupled Two Dimensional Plasmonic Cavities,
Phys. Rev. Lett. 109, 126803 (2012)

J. Jobst, H. B. Weber:
Origin of logarithmic resistance correction in graphene,
Nature Physics 8, 352 (2012) [doi: 10.1038/nphys2297]

S. Hertel, D. Waldmann, J. Jobst, A. Albert, M. Albrecht, S. Reshanov, A. Schöner, M. Krieger, H. B. Weber:
Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics,
Nature Communications 3, 957 (2012) [doi: 10.1038/ncomms1955]

S. Preu, S. Kim, R. Verma, P. G. Burke, N. Q. Vinh, M. S. Shewin, A. C. Gossard:
Terahertz detection by a homodyne field effect transistor multiplicative mixer,
IEEE Trans. THz Sci. Technol. 2, 278-283 (2012)

A. R. Criado, C. de Dios, G. H. Döhler, S. Preu, S. Malzer, S. Bauerschmidt, H. Lu, A. C. Gossard, P. Acedo:
Ultra-narrow linewidth CW sub THz-generation using GS based OFCG and n-i-pn-i-p superlattice photomixers,
Electron. Lett. 48, 1425-1426 (2012)

B. Zippelius, A. Glas, H. B. Weber, G. Pensl, T. Kimoto, M. Krieger:
Z1/2- and EH6-Center in 4H-SiC: Not Identical Defects?,
Materials Science Forum 717-720, 251-254 (2012) [doi: 10.4028/www.scientific.net/MSF.717-720.251]

2011

D. Waldmann, J. Jobst, F. Speck, T. Seyller, M. Krieger, H. B. Weber:
Bottom-gated epitaxial graphene,
Nature Materials 10, 357-360 (2011) [doi: 10.1038/nmat2988]

S. Hertel, F. Kißlinger, J. Jobst, D. Waldmann, M. Krieger, H. B. Weber:
Current annealing and electrical breakdown of epitaxial graphene,
Applied Physics Letters 98, 212109 (2011) [doi: 10.1063/1.3592841]

T. Tsirimpis, S. Beljakowa, B. Zippelius, H. B. Weber, G. Pensl, M. Krieger, H. Nagasawa, T. Kawahara, N. Hatta, K. Yagi, H. Uchida, M. Kobayashi, A. Schöner:
Iron-related Defect Centers in 3C-SiC,
Materials Science Forum 679-680, 265-268 (2011) [doi: 10.4028/www.scientific.net/MSF.679-680.265]

L. Trapaidze, R. Hollweck, S. Beljakowa, B. Zippelius, H. B. Weber, G. Pensl, M. Krieger:
Iron-related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy,
Materials Science Forum 679-680, 257-260 (2011) [doi: 10.4028/www.scientific.net/MSF.679-680.257]

D. Secker, S. Wagner, S. Ballmann, R. Härtle, M. Thoss, H. B. Weber:
Resonant Vibrations, Peak Broadening, and Noise in Single Molecule Contacts: The Nature of the First Conductance Peak,
Physical Review Letters 106, 136807 (2011) [doi: 10.1103/PhysRevLett.106.136807]

F. Speck, J. Jobst, F. Fromm, D. Waldmann, M. Hundhausen, H. B. Weber, T. Seyller:
The quasi-free-standing nature of graphene on H-saturated SiC,
Applied Physics Letters 99, 122106 (2011) [doi: 10.1063/1.3643034]

B. Zippelius, M. Krieger, H. B. Weber, G. Pensl, H. Nagasawa, T. Kawahara, N. Hatta, K. Yagi, H. Uchida, M. Kobayashi:
Thermally-assisted tunneling model for 3C-SiC p+-n diodes,
Materials Science Forum 679-680, 571-574 (2011) [doi: 10.4028/www.scientific.net/MSF.679-680.571]

J. Jobst, D. Waldmann, F. Speck, R. Hirner, D. K. Maude, T. Seyller, H. B. Weber:
Transport Properties of High Quality Epitaxial Graphene on 6H-SiC(0001),
Solid State Communications, 1061-1064 (2011) [doi: 10.1016/j.ssc.2011.05.015]

S. Preu, G. H. Döhler, S. Malzer, A. C. Gossard, L. J. Wang:
Tunable, Continuos-Wave Photomixer Sources and Applications,
J. Appl. Phys. 109, 061301 (2011)

2010

S. Bauerschmidt, S. Preu, S. Malzer, G. H. Döhler, H. Lu, A. C. Gossard, L. J. Wang:
Continuos Wave Terahertz Emitter Arrays for Spectroscopy and Imaging Applications,
Proc. SPIE 7671, 7671D (2010)

K. Kawahara, N. Hatta, K. Yagi, H. Uchida, M. Kobayashi, M. Abe, H. Nagasawa, B. Zippelius, G. Pensl:
Correlation Between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC,
Materials Science Forum 645-648, 339-342 (2010)

L. Bäumer, M. Höller, R. Gerlach, M. Hensel, J. Rheinlaender, T. E. Schäffer, A. Burkovski:
Corynebacterium diphteriae invasion-associated protein (DIP1281) is involved in cell surface organization, adhesion and internalization in epithelial cells,
BMC Microbiology 10:2, - (2010)

M. Weidner, L. Trapaidze, G. Pensl, S. Reshanov, A. Schöner, H. Itoh, T. Ohshima, T. Kimoto:
Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons,
Materials Science Forum 645-648, 439-442 (2010)

G. Alfieri, T. Kimoto, G. Pensl:
Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC,
Materials Science Forum 645-648, 455-458 (2010)

K. Kawahara, M. Krieger, J. Suda, T. Kimoto:
Deep levels induced by reactive ion etching in n- and p-type 4H-SiC,
Journal of Applied Physics 108, 023706 (2010) [doi: 10.1063/1.3460636]

M. Krieger, S. Beljakowa, B. Zippelius, V. Afanas'ev, A. Bauer, N. Yuichiro, T. Kimoto, G. Pensl:
Detection and Electrical Characterization of Defects at the SiO2/4H-SiC Interface,
Materials Science Forum 645-648, 463-468 (2010)

K. Kawahara, G. Alfieri, T. Hiyoshi, G. Pensl, T. Kimoto:
Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-type and p-type 4H-SiC,
Materials Science Forum 645-648, 651-654 (2010)

S. Preu, S. Malzer, G. H. Döhler, A. C. Gossard, L. J. Wang:
Efficient III-V tunnelling Diodes with ErAs Recombination Centers,
Semicond. Sci. Technol. 25, 115004 (2010)

T. Tsirimpis, M. Krieger, H. B. Weber, G. Pensl:
Electrical activation of B+-ions implanted into 4H-SiC,
Materials Science Forum 645-648, 697-700 (2010)

T. Tsirimpis, M. Krieger, G. Pensl, M. Beshkova, M. Syväjärvi, R. Yakimova:
Electrical Characterization of p-type 3C-SiC Epilayers Grown on n-type 6H-SiC by means of Sublimation Epitaxy, 87-90 (2010)

C. Braunsmann, T. E. Schäffer:
High-speed atomic force microscopy for large scan sizes using small cantilevers,
Nanotechnology 21, 225705 (2010)

S. Ballmann, W. Hieringer, D. Secker, Z. Qinglin, J. A. Gladysz, A. Görling, H. B. Weber:
Molecular Wires in Single-Molecule Junctions: Charge Transport and Vibrational Excitations,
ChemPhysChem, 2256-2260 (2010)

F. Yan, R. Devaty, W. Choyke, T. Kimoto, T. Ohshima, G. Pensl, A. Gali:
New lines and issues with deep defect spectra in electron, proton and 4He ion irradiated 4H SiC,
Materials Science Forum 645-648, 411-414 (2010)

Y. Nanen, B. Zippelius, S. Beljakowa, L. Trapaidze, M. Krieger, T. Kimoto, G. Pensl:
Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs,
Materials Science Forum 645-648, 487-490 (2010)

J. Jobst, D. Waldmann, F. Speck, R. Hirner, D. Maude, T. Seyller, H. B. Weber:
Quantum oscillations and quantum Hall effect in epitaxial graphene,
Phys Rev. B, 195434 (2010)

F. Speck, M. Ostler, J. Röhrl, J. Jobst, D. Waldmann, M. Hundhausen, L. Ley, H. B. Weber, T. Seyller:
Quasi-freestanding Graphene on SiC(0001),
Materials Science Forum 645-648, 629-632 (2010)

K. Kawahara, G. Alfieri, M. Krieger, T. Kimoto:
Reactive-Ion-Etching Induced Deep Levels Observed in n-type and p-type 4H-SiC,
Materials Science Forum 645-648, 759-762 (2010)

K. Kawahara, J. Suda, G. Pensl, T. Kimoto:
Reduction of deep levels generated by ion implantation into n- and p-type 4H-SiC,
Journal of Applied Physics 108, 0033706 (2010)

J. Rheinlaender, T. E. Schäffer:
Scanning Ion Conductance Microscopy, 433-460 (2010)

S. Beljakowa, S. Reshanov, B. Zippelius, M. Krieger, G. Pensl, K. Danno, T. Kimoto, S. Onoda, T. Ohshima, Y. Fei, R. Devaty, W. Choyke:
Shallow defects observed in as-grown and electron-irradiated or He+-implanted Al-doped 4H-SiC epilayers,
Materials Science Forum 645-648, 427-430 (2010)

A. Bauer, P. Friedrichs, M. Krieger, G. Pensl, R. Rupp, T. Seyller:
Silicon Carbide and Related Materials 2009 - Parts 1 and 2, 1246 (2010)

P. Friedrichs, T. Kimoto, L. Ley, G. Pensl:
Silicon Carbide, Vol. 1 (Growth, Defects, and Novel Applications) Vol. 2 (Power Devices and Sensors) (2010)

L. Bäumer, R. Schey, J. Rheinlaender, T. E. Schäffer, M. Hensel, A. Burkovski:
Strain-specific differences in pili formation and the interaction of Corynebacterium diphtheriae with host cells,
BMC Microbiology, 10:257 (2010)

B. Zippelius, M. Krieger, H. B. Weber, G. Pensl, H. Nagasawa, T. Kawahara, N. Hatta, K. Yagi, H. Uchida, M. Kobayashi:
Temperature-dependence of the leakage current of 3C-SiC p+-n diodes caused by extended defects,
Materials Science Forum 645-648, 343-346 (2010)

A. Klemm, S. Kienle, J. Rheinlaender, T. E. Schäffer, W. Goldmann:
The Influence of Pyk2 on the mechanical properties in fibroblasts,
Biochemical and Biophysical Research Communications 393, 694-697 (2010)

F. Yan, R. Devaty, W. Choyke, K. Danno, G. Alfieri, T. Kimoto, S. Onoda, T. Ohshima, S. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl:
Thermal histories of defect centers as measured by low temperature photoluminescence in n- and p-type 4H SiC epilayers generated by irradiation with 170 keV or 1 MeV electrons,
Materials Science Forum 645-648, 419-422 (2010)

S. Reshanov, S. Beljakowa, B. Zippelius, G. Pensl, K. Danno, G. Alfieri, T. Kimoto, S. Onoda, T. Ohshima, Y. Fei, R. Devaty, W. Choyke:
Thermal Stability of Defect Centers in n- and p-type 4H-SiC Epilayers Generated by Irradiation with High-energy Electrons,
Materials Science Forum 645-648, 423-426 (2010)

J. Jobst, D. Waldmann, K. Emtsev, T. Seyller, H. B. Weber:
Transport properties of single-layer epitaxial graphene on 6H-SiC (0001),
Materials Science Forum 645-648, 637-641 (2010)

2009

M. Noborio, J. Suda, S. Beljakowa, M. Krieger, T. Kimoto:
4H-SiC MISFETs with nitrogen-containing insulators,
Phys Status Solidi A 206, 2374-2390 (2009) [doi: 10.1002/pssa.200925247]

H. Nagasawa, K. Yagi, T. Kawahara, N. Hatta, M. Abe, A. Schöner, M. Bakowski, P. Ericsson, G. Pensl:
Challenges for Improving the Chrystal Quality of 3C-SiC Verified with MOSFET Performance,
Mater. Sci. Forum 600-603, 89 (2009)

S. Preu:
Contiunous-Wave, Tunable THz n-i-pn-i-p Superlattice Photomixers and Applications,
Erlangen Scientific Press 30, - (2009)

S. Reshanov, G. Pensl, K. Danno, T. Kimoto, S. Hishiki, T. Oshima, H. Itoh, F. Yan, R. P. Devaty, W. J. Choyke:
Effect of the Schottky Barrier height on the Detection of Midgap Levels in 4H-SiC by Deep Level transient Spectroscopy,
Mater. Sci. Forum 600-603, 417 (2009)

S. Reshanov, S. Beljakowa, T. Frank, B. Zippelius, M. Krieger, G. Pensl, M. Noborio, T. Kimoto:
High Channel Mobility of 4H-SiC MOSFET's Fabricated by Over-oxidation of the N-/Al-coimplanted Surface Layer,
Mater Sci. Forum 615-617, 765-768 (2009)

B. Zippelius, S. Beljakowa, M. Krieger, G. Pensl, S. A. Reshanov, M. Noborio, T. Kimoto, V. V. Afanas'ev:
High electron mobility achieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen,
Phys Status Solidi A 206, 2363-2373 (2009) [doi: 10.1002/pssa.200925089]

M. Böcker, S. Muschter, E. Schmitt, C. Steinem, T. E. Schäffer:
Imaging and patterning of pore-suspending membranes with scanning ion conductance microscopy,
Langmuir 25, 3022-3028 (2009)

B. Zippelius, M. Krieger, H. B. Weber, G. Pensl, B. Kallinger, J. Friedrich, B. Thomas:
Influence of Growth Rate and C/Si-ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS,
Mater Sci. Forum 615-617, 393-396 (2009)

L. Lovlie, I. Pintilie, S. Kumar, U. Grossner, B. G. Svensson, S. Beljakowa, S. Reshanov, M. Krieger, G. Pensl:
Interface States in 4H- and 6H-SiC MOS Capacitors: a Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique,
Mater Sci. Forum 615-617, 497-500 (2009)

F. Schmid, K. Semmelroth, M. Krieger, H. B. Weber, G. Pensl, E. E. Haller:
Ionization Energies of Phosphorus Donors in 6H-SiC,
Materials Science Forum 600-603, 441 (2009)

S. Reshanov, W. Bartsch, B. Zippelius, G. Pensl:
Lifetime Investigations of 4H-SiC PiN Power Diodes,
Mater Sci. Forum 615-617, 699-702 (2009)

J. Rheinlaender, T. E. Schäffer:
Image formation and resolution in scanning ion conductance microscopy,
Journal of Applied Physics 105, 094905 (2009)

S. Hishiki, S. A. Reshanov, T. Ohshima, H. Itoh, G. Pensl:
Reduction of Interface Traps and Enhancement of Channel Mobility in n-channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays,
Mater. Sci. Forum 600-603, 703 (2009)

M. Böcker, H. Fuchs, T. E. Schäffer:
Scanning Ion Conductance Microscopy of Cellular and Artificial Membranes, 197-212 (2009)

K. Emtsev, A. Bostwick, K. Horn, J. Jobst, G. Kellogg, L. Ley, J. McChesney, T. Ohta, S. Reshanov, J. Röhrl, E. Rotenberg, A. Schmid, D. Waldmann, H. B. Weber, T. Seyller:
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide,
Nature Materials 8, 203-207 (2009) [doi: 10.1038/NMAT2382]

S. Beljakowa, M. Krieger, T. Frank, G. Pensl, L. Trapaidze, N. Hatta, M. Abe, H. Nagasawa, A. Schöner:
Two Different Species of Traps Monitored at N-implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy,
Materials Science Forum 600-603, 727 (2009)

2008

G. Sonia, E. Richter, F. Brunner, A. Denker, R. Lossy, F. Lenk, J. Bundesmann, G. Pensl, J. Schmidt, U. Zeimer, L. Wang, K. Baskar, M. Weyers, J. Würfl, G. Tränkle:
2MeV ion irradiation effects on AlGaN/GaN HFET devices 52, 1011 (2008)

G. Pensl, S. Beljakowa, T. Frank, K. Gao, F. Speck, T. Seyller, L. Ley, F. Ciobanu, V. Afanas'ev, S. Shamuilia, T. Kimoto, A. Schöner:
Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors,
phys.stat. sol. (b), 1378 (2008)

M. Krieger, S. Beljakowa, L. Trapaidze, T. Frank, H. B. Weber, G. Pensl, N. Hatta, M. Abe, H. Nagasawa, A. Schöner:
Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors,
phys. stat. sol. (b) 245, 1390-1395 (2008) [doi: 10.1002/pssb.200844062]

P. Lauffer, K. Emtsev, R. Graupner, T. Seyller, L. Ley, S. Reshanov, H. B. Weber:
Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy,
Physical Review B 77, 155426 (2008)

M. Ruben, A. Landa, E. Lörtscher, H. Riel, M. Mayor, H. Görls, H. B. Weber, A. Arnold, F. Evers:
Charge Transport Through a Cardan-Joint Molecule,
Small 4, 2229 (2008)

E. Lortscher, M. Elbing, M. Tschudy, C. von Hanisch, H. B. Weber, M. Mayor, H. Riel:
Charge Transport through Molecular Rods with Reduced pi-Conjugation,
Chemphyschem 9, 2252 (2008)

S. Preu, S. Malzer, G. H. Döhler, L. J. Wang:
Coherent Superposition of Terahertz Beams,
Proc. SPIE 7117, 7117S (2008)

S. Preu, H. G. L. Schwefel, G. H. Döhler, L. J. Wang, M. Hanson, J. D. Zimmerman, A. C. Gossard:
Coupled Whispering Gallery Mode Resonators in the Terahertz Frequency Range,
Opt. Express 16, 7336-7343 (2008)

S. Reshanov, K. Emtsev, F. Speck, K. Gao, T. Seyller, G. Pensl, L. Ley:
Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts,
phys.stat. sol. (b), 1369 (2008)

O. Tal, M. Krieger, B. Leerink, J. M. v. Ruitenbeek:
Electron-Vibration Interaction in Single-Molecule Junctions: From Contact to Tunneling Regimes,
Physical Review Letters 100, 196804 (2008) [doi: 10.1103/PhysRevLett.100.196804]

M. Kiguchi, O. Tal, S. Wohlthat, F. Pauly, M. Krieger, D. Djukic, J. C. Cuevas, J. M. Ruitenbeek:
Highly Conductive Molecular Junctions Based on Direct Binding of Benzene to Platinum Electrodes,
Physical Review Letters 101, 046801 (2008) [doi: 10.1103/PhysRevLett.101.046801]

S. Preu, S. Malzer, G. H. Döhler, Q. Z. Zhao, M. Hanson, J. D. Zimmerman, A. C. Gossard, L. J. Wang:
Interference Between Two Coherently Driven Monochromatic Terahertz Sources,
Appl. Phys. Lett. 92, 221107 (2008)

D. Sanchez, N. Johnson, C. Li, P. Novak, J. Rheinlaender, Y. Zhang, U. Anand, P. Anand, J. Gorelik, G. Frolenkov, C. Benham, M. Lab, V. Ostanin, T. E. Schäffer, D. Klenerman, Y. Korchev:
Non-contact measurement of the local mechanical properties of living cells using pressure applied via a pipette,
Biophysical Journal 95, 3017-3027 (2008)

2007

S. Beljakowa, T. Frank, G. Pensl, K. Y. Gao, F. Speck, T. Seyller:
4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al2O3,
Mater. Sci. Forum 556-557, 627 (2007)

A. Heredia, C. C. Bui, U. Suter, P. Young, T. E. Schäffer:
AFM combines functional and morphological analysis of perpheral myelinated and demyelinated nerve fibers,
NeuroImage 37, 1218-1226 (2007)

D. Secker, H. B. Weber:
Charge transport across single-molecule junctions: charge reconfiguration and structural dynamics,
Phys. stat. sol. (b) 244, 4176-4180 (2007)

T. Frank, S. Beljakowa, G. Pensl, T. Kimoto, V. Afanas'ev:
Control of the Flatband Voltage of 4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors by Co-implantation of Nitrogen and Aluminum,
Mater. Sci. Forum 556-557, 555 (2007)

P. Rosenits, T. Roth, S. W. Glunz, S. Beljakowa:
Determining the defect parameters of the deep aluminium-related defect center in silicon,
Appl. Phys. Letters 91, 122109 (2007)

S. Reshanov, G. Pensl, K. Danno, T. Kimoto, S. Hishiki, T. Ohshima, H. Itoh, F. Yan, R. P. Devaty, W. J. Choyke:
Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy,
Journal of Appl. Physics 102, 113702 (2007)

S. Preu, F. H. Renner, S. Malzer, G. H. Döhler, L. J. Wang, T. L. J. Wilkinson, E. R. Brown, M. Hanson, A. C. Gossard:
Efficient Terahertz Emission from Ballistic Transport Enhanced n-i-p-n-i-p Superlattice Photomixers,
Appl. Phys. Lett. 90, 212115 (2007)

M. Oberndorfer, M. Krieger, F. Schmid, H. B. Weber, G. Pensl, A. Schöner:
Electrical and Structural Properties of Al-Implanted and annealed 4H-SiC,
Mater. Sci. Forum 556-557, 343 (2007)

T. Roth, P. Rosenits, S. Diez, S. W. Glunz, D. Macdonald, S. Beljakowa, G. Pensl:
Electronic properties and dopant pairing behaviour of manganese in boron-doped silicon,
Journal of Appl. Physics 102, 103716 (2007)

K. K. Lee, G. Pensl, M. Soueidan, G. Ferro:
Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC by Vapour-Liquid-Solid Mechanism,
Mater. Sci. Forum 556-557, 505 (2007)

T. Frank, G. Pensl, R. Tena-Zaera, J. Zúniga-Pérez, C. Martínez-Tomás, V. Munoz-Sanjosé, T. Oshima, H. Itoh, D. Hofmann, D. Pfisterer, J. Sann, B. Meyer:
Energetically deep defect centers in vapor-phase grown zinc oxide,
Appl. Phys. A: Materials Science Processing 88, 141-145 (2007)

K. Semmelroth, M. Krieger, G. Pensl, H. Nagasawa, R. Püsche, M. Hundhausen, L. Ley, M. Nerding, H.-P. Strunk:
Growth of cubic SiC single crystals by the physical vapor transport technique,
Journal of Crystal Growth 308, 241-246 (2007)

K. K. Lee, M. Laube, T. Oshima, H. Ithoh, G. Pensl:
Hall Effect and admittance measurements of n-Channel 6H-SiC MOSFETs,
Mater. Sci. Forum 556-557, 791 (2007)

M. Krieger, K. Semmelroth, H. B. Weber, G. Pensl, M. Rambach, L. Frey:
Impurity Conduction in Silicon Carbide,
Mater. Sci. Forum 556-557, 364 (2007)

T. E. Schäffer:
Low-noise methods for optical measurements of cantilever deflections, 51-74 (2007)

J. Schöck, R. J. Davies, A. Martel, C. Riekel:
Na-Cellulose Formation in a Single Cotton Fiber Studied by Synchrotron Radiation Microdiffraction,
Biomacromolecules 8, 602 (2007)

D. M. Hofmann, D. Pfisterer, J. Sann, B. K. Meyer, R. Tena-Zaera, V. Munoz-Sanjose, T. Frank, G. Pensl:
Properties of the oxygen vacancy in ZnO,
Applied Physics A 88, 147-151 (2007)

J. Schmidt, R. Krain, K. Bothe, G. Pensl, S. Beljakowa:
Recombination activity of interstitial chromium and chromium-boron pairs in silicon,
Journal of Appl. Physics 102, 123701 (2007)

M. Böcker, B. Anczykowski, J. Wegener, T. E. Schäffer:
Scanning ion conductance microscopy with distance-modulated shear force control,
Nanotechnology 18, 145505 (2007)

M. Böcker, T. E. Schäffer:
Scanning Ion Conductance Microscopy,
G.I.T. Imaging & Microscopy 02/2007, 30-32 (2007)

S. Reshanov, H. B. Weber, G. Pensl, A. Schöner, H. Nagasawa:
Selenium and Tellurium Double Donors in SiC,
Mater. Sci. Forum 556-557, 607 (2007)

T. E. Schäffer, B. Anczykowski, M. Böcker, H. Fuchs:
Shear-Force-Controlled Scanning Ion Conductance Microscopy, 197-212 (2007)

E. Lörtscher, H. B. Weber, H. Riel:
Statistical Approach to Investigating Transport through Single Molecules,
Physical Review Letters 98, 176807 (2007) [doi: 10.1103/PhysRevLett.98.176807]

A. Heredia, M. Aguilar-Franco, C. Magana, C. Flores, C. Pina, R. Velázquez, T. E. Schäffer, L. Bucio, V. A. Basiuk:
Structure and interactions of calcite spherulites with a-chitin in the brown shrimp (Penaeus aztecus) shell,
Materials Science and Engineering C 27, 8-13 (2007)

C. Riethmüller, T. E. Schäffer, F. Kienberger, W. Stracke, H. Oberleithner:
Vacuolar structures can be identified by AFM elasticity mapping,
Ultramicroscopy 107, 895-901 (2007)

2006

K. K. Lee, T. Ohshima, A. Ohi, H. Itho, G. Pensl:
Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal-Oxide-semiconductor Field-Effect Transistors Containing Step Bunching,
Jap. J. Appl. Phys. 45, 6830 (2006)

E. Rauls, U. Gerstmann, S. Greulich-Weber, K. Semmelroth, G. Pensl, E. Haller:
New aspects in n-type doping of SiC with phosphorus,
Mater. Sci. Forum 527-529, 609 (2006)

F. Schmid, G. Pensl, M. Bockstedte, A. Mattausch, O. Pankratov, T. Ohshima, H. Itoh, H. B. Weber, S. Reshanov:
Deactivation of nitrogen donors in silicon carbide,
Phys. Rev. B 74, 245212 (2006)

G. Pensl, F. Ciobanu, T. Frank, D. Kirmse, M. Krieger, S. Reshanov, F. Schmidt, M. Weidner, T. Ohshima, H. Itoh, W. J. Choyke:
Defect-Engineering in SiC by ion-Implantation and electron-Irradiation,
Microelectronic Engineering 83, 146 (2006)

R. Püsche, M. Hundhausen, L. Ley, K. Semmelroth, G. Pensl, P. Desperrier, P. Wellmann, E. Haller, J. Ager, U. Starke:
Electronic Raman Studies of Shallow Donors in Silicon Carbide,
Mater. Sci. Forum 527-529, 579 (2006)

A. Schöner, M. Krieger, G. Pensl, M. Abe, H. Nagasawa:
Fabrication and Characterization of 3C-SiC based MOSFETs,
Chem Vap. Deposition 12, 523 (2006)

R. Ochs, D. Secker, M. Elbing, M. Mayor, H. B. Weber:
Fast temporal fluctuations in single-molecule junctions,
Faraday Discussions 131, 281-289 (2006)

G. Sonia, E. Richter, R. Lossy, M. Mai, J. Schmidt, M. Weyers, G. Tränkle, A. Denker, J. Opitz-Countureau, G. Pensl, I. Brauer, H.-P. Strunk:
High and low energy proton irradiation effects on AlGaN/GaN HFETs,
Phys. Stat. Sol. (c) 3, 2338 (2006)

T. E. Schäffer:
High-speed atomic force microscopy of biomolecules in motion, 221-247 (2006)

S. Reshanov, G. Pensl, H. Nagasawa, A. Schöner:
Idendification of sulfur double donors in 4H-, 6H-, and 3C-silicon carbide,
J. Appl. Phys. 99, 123717 (2006)

Y. Negoro, T. Kimoto, H. Matsunami, G. Pensl:
Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes,
Mater. Sci. Forum 527-529, 843 (2006)

T. E. Schäffer:
Nanoscale Calibration Standards and Methods - Dimensional and Related Measurements in the Micro- and Nanometer Range,
ChemPhysChem 7, 274 (2006)

M. F. Ciobanu, T. Frank, G. Pensl, V. Afanas'ev, S. Shamuilla, A. Schöner, T. Kimoto:
Nitrogen Implantation - an AlternativeTechnique to Reduce Traps at SiC/SiO2-Interfaces,
Mater. Sci. Forum 527-529, 991 (2006)

S. M. Cook, T. E. Schäffer, K. M. Chynoweth, M. Wigton, R. W. Simmonds, K. M. Lang:
Practical implementation of dynamic methods for measuring atomic force microscope cantilever spring constants,
Nanotechnology 17, 2135-2145 (2006)

G. Sonia, F. Brunner, A. Denker, R. Lossy, M. Mai, J. Opitz-Countereau, G. Pensl, E. Richter, J. Schmidt, U. Zeimer, L. Wang, M. Weyers, J. Wuerfl, G. Tränkle:
Proton and Heavy ion irradiation effects on AlGaN/GaN HFET devices,
Nuclear Science, IEEE Transactions 53, 3661 (2006)

T. E. Schäffer, B. Anczykowski, H. Fuchs:
Scanning Ion Conductance Microscopy, 91-119 (2006)

2005

K. Y. Gao, T. Seyller, K. Emtsev, L. Ley, F. Ciobanu, G. Pensl:
ALD Deposited Al2O3 Films on 6H-SiC (0001) after Annealing in Hydrogen Atmosphere,
Mater. Sci. Forum 483-485, 559 (2005)

K. Semmelroth:
Alternative Wege in der Volumenkristallzüchtung und Dotierung von Siliciumkarbid, 164 (2005)

M. Elbing, R. Ochs, M. Koentopp, M. Fischer, C. von Hänisch, F. Weigend, F. Evers, H. B. Weber, M. Mayor:
A single-molecular diode,
Proc. Natl. Acad, Sci. USA 102, 8815-8820 (2005) [doi: 10.1073/pnas.0408888102]

T. E. Schäffer:
Calculation of thermal noise in an atomic force microscope with a finite optical spot size Influence of hydrocortisone on the mechanical properties of the cerebral endothelium in vitro,
Nanotechnology 16, 664-670 (2005)

S. Reshanov, G. Pensl:
Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC,
Mater. Sci. Forum 483-485, 417 (2005)

T. Acertürk, K. Semmelroth, G. Pensl, S. E. Saddow, U. Starke:
Concentration of N and P in SiC Investigated by Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS),
Mater. Sci. Forum 483-485, 453 (2005)

M. Arnoldi, T. E. Schäffer, M. Fritz, M. Radmacher:
Direct observation of single catalytic events of chitosanase by atomic force microscopy,
AZojono - Journal of Nanotechnology Online 1, 1-11 (2005)

F. Schmid:
Dotierstoff-Zentren in Siliciumkarbid, 188 (2005)

H. B. Weber, M. Mayer, H. v. Löhneysen:
Electrical Current through Single Molecules,
Nova Acta Leopoldina 92, 47-53 (2005)

F. Yan, R. P. Devaty, W. J. Choyke, A. Gali, F. Schmid, G. Pensl, G. Wagner:
Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H-SiC,
Mater. Sci. Forum 483-485, 493 (2005)

F. Schmid, T. Frank, G. Pensl:
Experimental Evidence for an Electrically Neutral (N-Si)-complex Formed During the Annealing Process of Si+-/N+-co-implanted 4H-SiC,
Mater. Sci. Forum 483-485, 641 (2005)

V. M. Laurent, S. Kasas, A. Yersin, T. E. Schäffer, S. Catsicas, G. Dietler, A. B. Verkhovsky, J.-J. Meister:
Gradient of rigidity in the lamellipodia of migrating cells revealed by atomic force microscopy,
Biophysical Journal 89, 667-675 (2005)

M. Krieger, G. Pensl, M. Bakowski, A. Schöner, H. Nagasawa, M. Abe:
Hall Effect in the Channel of 3C-SiC MOSFETs,
Mater. Sci. Forum 483-485, 441 (2005)

M. Rambach, F. Schmid, M. Krieger, L. Frey, A. Bauer, G. Pensl, H. Ryssel:
Implantation and Annealing of Aluminum in 4H Silicon Carbide,
Nuclear Instruments and Methods in Physical Research B 237, 68-71 (2005)

S. Schrot, C. Weidenfeller, T. E. Schäffer, H. Robenek, H.-J. Galla:
Influence of hydrocortisone on the mechanical properties of the cerebral endothelium in vitro,
Biophysical Journal 89, 3904-3910 (2005)

H. B. Weber:
Interference and interaction in metallic mesoscopic structures, 1 (2005)

S. Beljakowa, T. Frank, D. Karg:
Investigation of the Metastability of FeGa- and CrGa-Pairs and their Behavior under Illumination, 1112 (2005)

F. Ciobanu, G. Pensl, V. V. Afanas'ev, A. Schöner:
Low Density of Interface States in n-type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation,
Mater. Sci. Forum 483-485, 693 (2005)

T. E. Schäffer:
Mechanics and Dynamics of Biomolecules and Nanostructures with Improved Scanning Probe Microscopes (2005)

J. van Ruitenbeek, E. Scheer, H. B. Weber:
Contacting Individual Molecules Using Mechanically Controllable Break Junctions, 253 - 274 (2005)

T. E. Schäffer, H. Fuchs:
Optimized detection of normal vibration modes of atomic force microscope cantilevers with the optical beam deflection method,
Journal of Appl. Physics 97, 083524 1-8 (2005)

E. K. Polychroniadis, A. Mantzari, A. Freudenberg, J. Wollweber, R. Nitschke, T. Frank, G. Pensl, A. Schöner:
PVT-growth and Characterization of single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate,
Mater. Sci. Forum 483-485, 319 (2005)

G. Pensl, F. Ciobanu, T. Frank, M. Krieger, S. Reshanov, F. Schmid, M. Weidner:
SiC Material Properties,
J. High Speed Electronics and Systems 15, 705 (2005)

V. V. Afanas'ev, F. Ciobanu, S. Dimitrijev, G. Pensl, A. Stesmans:
SiC/SiO2 Interface States: Properties and Models,
Mater. Sci. Forum 483-485, 563 (2005)

M. Krieger:
Transporteigenschaften von Elektronen in Siliziumkarbid bei tiefen Temperaturen und im Kanal von Metall-Oxid-Halbleiter-Transistoren, 214 (2005)

C. Morsczeck, C. Moehl, W. Götz, A. Heredia, T. E. Schäffer, N. Eckstein, C. Sippel, K. H. Hoffmann:
In vitro differentiation of human dental follicle cells with dexamethasone and insulin,
Cell Biology International 29, 567-575 (2005)

M. Weidner:
Zur Physik intrinsischer Defekte in 4H-, 6H- und 3C-Siliziumkarbid, 184 (2005)

2004

Y. Jiao, T. E. Schäffer:
Accurate height and volume measurements on soft samples with the atomic force microscope,
Langmuir 20, 10038-10045 (2004)

G. Pensl, S. Reshanov:
Electrical and Optical Determination of the Minority Carrier Lifetime in SiC, 994 (2004)

F. Schmid, G. Pensl:
Annealing Process of N+ -/P+-Ions Coimplanted along Si+-, C+ - or Ne+-Ions in 4H-SiC-Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?,
Mater. Sci. Forum 457-460, 909 (2004)

V. V. Afanas'ev, F. Ciobanu, S. Dimitrijev, G. Pensl, A. Stesmans:
Band alignment and defect states at SiC/oxide interfaces,
J. Phys. Condens. Matter 16, 1839 (2004)

R. Püsche, M. Hundhausen, L. Ley, K. Semmelroth, F. Schmid, G. Pensl, H. Nagasawa:
Characterization of cubic bulk SiC and temperature induced polytype conversion in cubic CVD SiC studied by Raman spectroscopy,
J. Appl. Phys. 96, 5569 (2004)

F. Schmid, G. Pensl:
Comparison of the electrical activation of P+ - and N+-ions coimplanted along with Si+ or C+-ions into 4H-SiC,
J. Appl. Phys. 84, 3064 (2004)

M. Laube, G. Pensl, K. K. Lee, T. Ohshima:
Comparison of the Electrical Channel Properties between Dry- and Wet Oxidized 6H-SiC MOSFETs Investigated by Hall Effect,
Mater. Sci. Forum 457-460, 1381 (2004)

S. Beljakowa, D. Karg, G. Pensl, J. Schmidt:
Degradation of Si-based Solarcells caused by Cr/Ga- and Fe/Ga-pairs, 705 (2004)

D. Karg, H. Charifi, G. Pensl, M. Schulz, G. Hahn:
Determination of the Oxygen, Carbon and Vacancy Concentration in Solar-Grade Silicon and Correlation with the Hydrogen Diffusivity, 709 (2004)

S. Beljakowa, D. Karg, G. Pensl, J. Schmidt:
Effect of CrGa-/FeGa-Pairs on the Performance of Ga-doped, Si-based Solar Cells,
Technical Digest, PVSEC-14 387, 387 (2004)

V. V. Afanas'ev, S. A. Campbell, K. Y. Cheong, F. Ciobanu, S. Dimitrijev, G. Pensl, A. Stesmans, L. Zhong:
Electronic properties of SiON/HfO2 insulating stacks on 4H-SIC (0001),
Mater. Sci. Forum 457-460, 1361 (2004)

Y. Negoro, T. Kimoto, H. Matsunami, F. Schmid, G. Pensl:
Electrical activation of high-dose aluminum-implanted 4H-SiC,
J. Appl. Phys. 96, 4916 (2004)

M. Laube:
Elektrische und massenspektrometrische Untersuchungen an Siliciumkarbid zur Evaluierung von Bauelement-relevanten Prozessen, 208 (2004)

D. Beckmann, H. B. Weber, H. v. Löhneysen:
Evidence for crossed Andreev reflection in superconductor-ferromagnet hybrid structures,
Phys. Rev. Lett. 93, 197003 (2004) [doi: 10.1103/PhysRevLett.93.197003]

R. Proksch, T. E. Schäffer, J. P. Cleveland, R. C. Callahan, M. B. Viani:
Finite optical spot size and position corrections in thermal spring constant calibration,
Nanotechnology 15, 1344-1350 (2004)

K. Semmelroth, N. Schulze, G. Pensl:
Growth of polytypes by the physical vapor transport technique,
J: Phys. Condens. Matter 16, 1597 (2004)

K. Semmelroth, M. Krieger, G. Pensl, H. Nagasawa, R. Püsche, M. Hundhausen, L. Ley, M. Nerding, H. P. Strunk:
Growth of 3C-SiC Bulk Material by the Modified Lely-Method,
Mater. Sci. Forum 457-460, 151 (2004)

F. Schmid, M. Krieger, M. Laube, G. Pensl, G. Wagner:
Hall Scattering Factor for Electrons and Holes in SiC,
Recent Major Advances in SiC 1, 517 (2004)

M. Krieger, K. Semmelroth, G. Pensl:
Impurity Conduction Observed in Al-doped 6H-SiC,
Mater. Sci. Forum 457-460, 685 (2004)

Y. Negoro, K. Katsumoto, T. Kimoto, H. Matsunami, F. Schmid, G. Pensl:
Low Sheet Resistance of High-dose Aluminium Implanted 4H-SiC Using (11-20) Face,
Mater. Sci. Forum 457-460, 913 (2004)

M. Nerding, K. Semmelroth, G. Pensl, H. Nagasawa, H. P. Strunk:
Microstructure of cubic SIC grown by the modified Lely-method,
Mater. Sci. Forum 457-460, 147 (2004)

S. Reshanov, K. Schneider, R. Helbig, G. Pensl, H. Nagasawa, A. Schöner:
Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy,
Mater. Sci. Forum 457-460, 513 (2004)

M. Weidner, G. Pensl, H. Nagasawa, A. Schöner, T. Ohshima:
Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation,
Mater. Sci. Forum 457-460, 485 (2004)

D. Karg, G. Pensl, M. Schulz:
Platinum-Diffusion: A Method for the Determination of Vacancy Profiles in EFG Silicon, 1112 (2004)

D. Beckmann, H. B. Weber, H. v. Löhneysen:
Probing dimensionality effects on non-equilibrium electronic transport in Cu nanobridges,
Phys. Rev. B 70, 033407 (2004)

T. Frank, H. Charifi, D. Karg, G. Pensl, M. Schulz:
Recombination-Active Defect Centers in Oxygen-Contaminated and Boron-Doped Czochralski Silicon, 919 (2004)

S. Beljakowa, D. Karg, G. Pensl, M. Schulz, H. v. Campe, C. Schmiga:
Resistance-Topography of p- and n-type EFG Si-Wafers by the Four-Point Probe Technique, 729 (2004)

K. Rüschenschmidt, H. Bracht, N. A. Stolwijk, M. Laube, G. Pensl, G. R. Brandes:
Self-diffusion in isotopically enriched silicon carbide and its correlation with dopant diffusion,
J. Appl. Phys. 96, 1458 (2004)

M. Mayor, H. B. Weber:
Statistical Analysis of single-molecule junctions,
Angewandte Chemie Int. Ed. 116, 2 (2004)

T. Seyller, K. Gao, L. Ley, F. Ciobanu, G. Pensl, A. Taddich, J. D. Riley, R. Leckey:
Structural and electronic properties of the 6H-SiC (0001) / Al2O3 Interface prepared by atomic layer deposition,
Mater. Sci. Forum 457-460, 1369 (2004)

R. Püsche, M. Hundhausen, L. Ley, K. Semmelroth, F. Schmid, G. Pensl, H. Nagasawa:
Study of the temperature induced polytype conversion in cubic SiC by Raman spectroscopy,
Mater. Sci. Forum 457-460, 617 (2004)

R. Püsche, M. Hundhausen, L. Ley, K. Semmelroth, F. Schmid, G. Pensl:
Temperature induced polytype conversion in cubic silicon carbide studied by Raman spectroscopy,
J. Appl. Phys. 96, 5569 (2004)

2003

K. Y. Gao, T. Seyller, L. Ley, F. Ciobanu, G. Pensl, A. Tadich, J. D. Riley, R. G. C. Leckey:
Al2O3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001),
Appl. Phys. Lett. 83, 1830 (2003)

V. Ivanova, I. Makarov, T. E. Schäffer, T. Heimburg:
Analyzing heat capacity profiles of peptide-containing membranes: Cluster formation of Gramicidin A.,
Biophysical Journal 84, 2427-2439 (2003)

H. B. Weber, J. Reichert, R. Ochs, D. Beckmann, M. Mayor, H. v. Löhneysen:
Conductance properties of single-molecule junctions,
Physica E 18, 231 (2003)

R. Krupke, F. Hennrich, H. B. Weber, D. Beckmann, O. Hampe, S. Malik, M. M. Kappes, H. v. Löhneysen:
Contacting single bundles of carbon nanotubes with alternating electric fields,
Appl. Phys. A 76, 397 (2003)

G. Pensl, F. Schmid, F. Ciobanu, M. Laube, S. Reshanov, N. Schulze, K. Semmelroth, H. Nagasawa, A. Schöner, G. Wagner:
Electrical and optical characterization of SiC,
Mater. Sci. Forum 433-436, 365 (2003)

M. Mayer, H. B. Weber, J. Reichert, M. Elbing, C. v. Hänisch, D. Beckmann, M. Fischer:
Electric current through a molecular rod – relevance of the anchor group position,
Angewandte Chemie Int. Ed. 42, 583 (2003)

S. Reshanov, O. Klettke, G. Pensl, W. J. Choyke:
Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers,
Mater. Sci. Forum 433-436, 459 (2003)

E. Kalinina, G. Kholujanov, A. Sitnikova, V. Kossov, R. Yafaev, G. Pensl, S. Reshanov, A. Hallèn, A. Konstantinov:
Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers,
Mater. Sci. Forum 433-436, 637 (2003)

K. Semmelroth, F. Schmid, D. Karg, G. Pensl, M. Maier, S. Greulich-Weber, J.-M. Spaeth:
Growth of Phosphorous-Doped 6H-SiC Single Crystals by the Modified Lely Method,
Mater. Sci. Forum 433-436, 63 (2003)

G. Pensl, M. Krieger, F. Ciobanu, M. Laube, S. Reshanov, F. Schmid, G. Wagner, H. Nagasawa, A. Schöner:
Hall Scattering Factor of Holes and Shallow Defect Centers in Aluminium-doped SiC,
Mat. Res. Soc. Symp. Proc. 742, 1 (2003)

G. Pensl, T. Frank, M. Krieger, M. Laube, S. Reshanov, F. Schmid, M. Weidner:
Implantation-induced defects in silicon carbide,
Phyica B 340-342, 121 (2003)

J. W. Steeds, G. A. Evans, S. Furkert, L. Ley, M. Hundhausen, N. Schulze, G. Pensl:
Indentification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H-SiC by Photoluminescence Spectroscopy,
Mater. Sci. Forum 433-436, 305 (2003)

H. Nagasawa, K. Yagi, T. Kawahara, N. Hatta, G. Pensl, W. J. Choyke, T. Yamada, K. M. Itoh, A. Schöner:
Low-Defect 3C-SiC Grown on Undulant-Si (001) Substrates,
Recent Major Advances in SiC 1, 207 (2003)

J. Reichert, H. B. Weber, M. Mayor, H. v. Löhneysen:
Low-temperature conductance measurements on single-molecules,
Appl. Phys. Lett. 82, 4137 (2003)

T. E. Schäffer, M. Radmacher, R. Proksch:
Magnetic force gradient mapping,
Journal of Appl. Physics 94, 6525-6532 (2003)

S. Reshanov, O. Klettke, G. Pensl:
Majority Traps Observed in H+ or He+ -implanted Al-doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy,
Mater. Sci. Forum 433-436, 379 (2003)

V. V. Afanas'ev, A. Stesmans, F. Ciobanu, G. Pensl, K. Cheong, S. Dimitrijev:
Mechanisms responsible for improvment of 4H-SiC/SiO2 interface properties by nitridation,
Appl. Phys. Lett. 82, 568 (2003)

M. Mayor, H. B. Weber, R. Waser:
Molecular Electronics, 1 (2003)

M. Laube, F. Schmid, K. Semmelroth, G. Pensl, R. P. Devaty, W. J. Choyke, G. Wagner, M. Maier:
Phosphorous-related centers in SiC,
Recent Major Advances in SiC 1, 493 (2003)

A. Kawasuso, M. Yoshikawa, M. Maekawa, H. Itoh, T. Chiba, F. Redmann, R. Krause-Rehberg, M. Weidner, T. Frank, G. Pensl:
Polytype-dependent vacancy annealing studied by positron annihilation,
Mater. Sci. Forum 433-436, 477 (2003)

W. Choyke, H. Matsunami, G. Pensl:
Silicon Carbide - Recent Major Advances, 899 (2003)

R. Krupke, F. Hennrich, H. B. Weber, H. B. Kappes, H. v. Löhneysen:
Simultaneous deposition of metallic bundles of single-walled carbon nanotubes using ac dielectrophoresis,
Nano Letters 3, 1019 (2003)

G. Pensl, T. Dalibor:
Solubility of impurities, Diffusion of impurities, Impurity and defect levels,
Landolt-Börnstein; Supplement to. Vol. III/17, 22b, 2-37 (2003)

H. B. Weber, M. Mayor:
Stromfluß durch einzelne Moleküle,
Physik in unserer Zeit 34, 272 (2003)

T. E. Schäffer, P. K. Hansma:
Summing the Output of an Array of Optical Detector Segments in an Atomic Force Microscope (2003)

F. Ciobanu, G. Pensl, H. Nagasawa, A. Schöner, S. Dimitrijev, K.-Y. Cheong, V. V. Afanas'ev, G. Wagner:
Traps at the Interface of 3C-SiC/SiO2-MOS-Structures,
Mater. Sci. Forum 433-436, 551 (2003)

2002

G. Wagner, W. Leitenberger, K. Irmscher, F. Schmid, M. Laube, G. Pensl:
Aluminum incorporation in 4H-SiC layers during epitaxial growth in a hot-wall CVD system,
Mater. Sci. Forum 389-393, 207 (2002)

R. Brendel, M. Bail, B. Bodmann, J. Kentsch, M. Schulz:
Analysis of photoexcited charge carrier density,
Appl. Phys. Lett. 80, 437 (2002)

R. Brendel, M. Bail, J. Kentsch, M. Schulz:
Analysis of photo-excited charge carrier profiles in Si,
Appl. Phys. Lett. 80, 437-439 (2002)

M. Mayor, C. v. Hänisch, H. B. Weber, J. Reichert, D. Beckmann:
A trans-Platinum(II) complex as a single molecule insulator,
Angewandte Chemie Int. Ed. 41, 1183 (2002)

O. Klettke:
Bauelement-relevante Defekte in Silicium und Siliciumkarbid, 206 (2002)

M. Laube, F. Schmid, G. Pensl, G. Wagner:
Codoping of 4H-SiC with N- and P-Donors by Ion Implantation,
Mater. Sci. Forum 389-393, 791 (2002)

T. Dalibor:
Deep Defect Centers in 4H and 6H Silicon Carbide, 162 (2002)

J. Reichert, R. Ochs, D. Beckmann, H. B. Weber, M. Mayor, H. v. Löhneysen:
Driving current through a single organic molecule,
Phys. Rev. Lett. 88, 176804 (2002) [doi: 10.1103/PhysRevLett.88.176804]

V. Gazus, R. Brendel, M. Schulz:
Dry processing of Si solar cells in a large area,
Solar Energy Materials & Solar Cells, 72 (2002)

F. Schmid, M. Laube, G. Pensl, G. Wagner, M. Maier:
Electrical Activation of Implanted Phosporous Ions in (0001)/(11-20)-oriented 4H-SiC,
Mater. Sci. Forum 389-393, 787 (2002)

H. B. Weber, J. Reichert, F. Weigend, R. Ochs, D. Beckmann, M. Mayor, R. Ahlrichs, H. v. Löhneysen:
Electronic transport through a single conjugated molecule,
Chem. Phys. 281, 113 (2002)

M. Laube, F. Schmid, G. Pensl, G. Wagner, M. Linnarsson, M. Maier:
Electrical Activation of High Concentrations of N^+^- and P^+^-Ions Implanted into 4H-SiC,
J. Appl. Phys. 92, 549 (2002)

F. Schmid, M. Laube, G. Pensl, G. Wagner, M. Maier:
Electrical Activation of Implanted Phosphorus Ions in [0001]- and [11-20]-oriented 4H-SiC,
J. Appl. Phys. 91, 9182 (2002)

T. Frank:
Elektrische und optische Charakterisierung intrinsischer Defekte in 6H-SiC, 161 (2002)

W. J. Choyke, R. P. Devaty, S. Bai, A. Gali, P. Deák, G. Pensl:
Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC,
Mater. Sci. Forum 389-393, 585 (2002)

B. Herzog, S. Rohmfeld, M. Hundhausen, L. Ley, K. Semmelroth, G. Pensl:
Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy,
Mater. Sci. Forum 389-393, 625 (2002)

T. E. Schäffer:
Force Spectroscopy with a Large Dynamic Range Using Small Cantilevers and an Array Detector,
Journal of Appl. Physics 91, 4739-4746 (2002)

T. E. Schäffer, P. K. Hansma:
High Sensitivity Deflection Sensing Device (2002)

G. A. Evans, J. W. Steeds, L. Ley, M. Hundhausen, N. Schulze, G. Pensl:
Identification of carbon interstitials in electron irradiated 6H-SiC by use of a 13C enriched specimen,
Phys. Rev. B 66, 035204-1 (2002)

A. Hoff, T. André, T. E. Schäffer, G. Jung, K.-H. Wiesmüller, R. Brock:
Lipoconjugates for the Noncovalent Generation of Microarrays in Biochemical and Cellular Assays,
ChemBioChem 3, 1183-1191 (2002)

D. Scholten:
Modeling of waffle-shaped silicon solar cells, 117 (2002)

M. Mayor, H. B. Weber:
Molecular Electronics - Integration of single molecules in electronic circuits,
Chimia 56, 494 (2002)

M. Mayor, H. B. Weber:
Molekulare Elektronik,
Nachrichten aus der Chemie 50, 1212 (2002)

V. Afanas'ev, M. Baßler, G. Pensl, A. Stesmans:
Oxidation of Silicon Carbide: Problems and Solutions,
Mater. Sci. Forum 389-393, 961 (2002)

R. Krupke, S. Malik, H. B. Weber, O. Hampe, M. M. Kappes, H. v. Löhneysen:
Patterning and visualizing of self-assembled monolayers with low-energy electrons,
Nano Letters 2, 1161 (2002)

H. Heißenstein:
Phosphordotierung von 4H- und 6H-Siliziumkarbid mittels Nuklearer Transmutation (NTD), 130 (2002)

R. Brendel:
Physical limitations to crystalline thin-film silicon solar cells (2002)

V. V. Afanas'ev, F. Ciobanu, G. Pensl, A. Stesmans:
Proton trapping in SiO2 layers thermally grown on Si and SiC,
Solid-State Electronics 46, 1815 (2002)

A. Kawasuso, M. Weidner, F. Redmann, T. Frank, R. Krause-Rehberg, G. Pensl, P. Sperr, M. Yoshikawa, K. Kojima, H. Itoh:
Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep Level Transient Spectroscopy,
Mater. Sci. Forum 389-393, 489 (2002)

H. B. Weber:
Transistoren aus einzelnen Molekülen,
Physik Journal 1, 20 (2002)

2001

A. Kawasuso, F. Redmann, R. Krause-Rehberg, P. Sperr, T. Frank, M. Weidner, G. Pensl, H. Itoh:
Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study,
Mater. Sci. Forum 353-356, 537 (2001)

A. Kawasuso, F. Redmann, R. Krause-Rehberg, M. Weidner, T. Frank, G. Pensl, P. Sperr, W. Triftshäuser, H. Itoh:
Annealing behavior of vacancies and Z1/2 levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy,
Appl. Phys. Lett. 79 (24), 3950 (2001)

M. Krieger, M. Laube, M. Weidner, G. Pensl:
Beryllium-Related Defect Centers in 4H-SiC,
Mater. Sci. Forum 353-356, 467 (2001)

V. V. Afanas'ev, A. Stesmans, M. Bassler, G. Pensl:
Comment on "Reduction of interface-state density in 4H-SiC n-type metal-oxide-semiconductor structures using high-temperature hydrogen annealing,
Appl. Phys. Lett. 78, 4043 (2001)

R. Häussler, E. Scheer, H. B. Weber, H. v. Löhneysen:
Conductance oscillations in mesoscopic rings: microscopic versus macroscopic picture,
Phys. Rev. B 64, 085404 (2001)

G. Hemakanthi, A. Dhathathreyan, B. U. Nair, T. Ramasami, D. Möbius, T. E. Schäffer:
Control of size of PbI2 nanocrystals using Langmuir-Blodgett films of n-octadecyl succinic acid,
Colloids and Surfaces A 181, 115-121 (2001)

K. Rüschenschmidt, H. Bracht, M. Laube, N. A. Stolwijk, G. Pensl:
Diffusion of boron in silicon carbide,
Physica B 308-310, 734 (2001)

Y. Jiao, D. I. Cherny, G. Heim, T. M. Jovin, T. E. Schäffer:
Dynamic Interactions of p53 with DNA in Solution by Time-Lapse Atomic Force Microscopy,
Journal of Molecular Biology 314, 233-243 (2001)

V. B. Shmagin, B. A. Andreev, E. N. Morozova, Z. F. Krasil'nik, D. I. Kryzhkov, V. P. Kuznetsov, E. A. Uskova, C. A. J. Ammerlaan, G. Pensl:
Electrically active centers in light emitting Si:Er/Si structures grown by the sublimation MBE method,
Physica B 308-310, 361 (2001)

O. Klettke, S. Reshanov, G. Pensl, Y. Shihkin, R. P. Devaty, W. J. Choyke:
Electrical and optical properties of erbium-related centers in 6H silicon carbide,
Physica B 308-310, 687 (2001)

H. Grünleitner:
Elektro-optische Eigenschaften von ultradünnen (1-7nm) Iridiumsilizidschichten auf Silizium(100), 149 (2001)

O. Klettke, D. Karg, G. Pensl, M. Schulz, G. Hahn, T. Lauinger:
Formation of the Chromium-Boron Complex in Solar-grade Multicrystalline Silicon, 617 (2001)

M. Weidner, T. Frank, G. Pensl, A. Kawasuso, H. Itoh, R. Krause-Rehberg:
Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H- and 6H-silicon carbide,
Physica B 308-310, 633 (2001)

T. Frank, M. Weidner, H. Itoh, G. Pensl:
Generation and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiC,
Mater. Sci. Forum 353-356, 439 (2001)

O. Madelung, U. Rössler, M. Schulz:
Group IV Elements, IV-IV and III-V Compounds A1, 683 (2001)

N. Schulze, J. Gajowski, K. Semmelroth, M. Laube, G. Pensl:
Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method,
Mater. Sci. Forum 353-356, 45 (2001)

S. Rohmfeld, M. Hundhausen, L. Ley, N. Schulze, G. Pensl:
Isotope-Disorder-Induced Line Broadening of Phonons in the Raman Spectra of SiC,
Phys. Rev. Lett. 86, 826 (2001)

S. Rohmfeld, M. Hundhausen, L. Ley, N. Schulze, G. Pensl:
Line Broadening of Phonons in the Raman Spectra of Isotopically Disordered SiC,
Mater. Sci. Forum 353-356, 341 (2001)

H. Sadowski, N. Schulze, T. Frank, M. Laube, G. Pensl, R. Helbig:
Low Temperature Photoluminescence Processes of 13C Enriched 6H- and 15R-SiC Crystals Grown by the Modified Lely Method,
Mater. Sci. Forum 353-356, 401 (2001)

H. B. Weber, R. Häussler, H. v. Löhneysen, J. Kroha:
Magnetic field dependence on the zero-bias anomaly in metallic diffusive nanobridges, 1 (2001)

S. Brouer, G. Weiss, H. B. Weber:
Mechanically controlled tunneling of a single atomic defect,
Europhys. Lett. 54, 654 (2001)

J. Krinke, G. Kuchler, R. Brendel, M. Schulz:
Microstructure of epitaxial layers deposited on Si,
Solar Energy Materials & Solar Cells, 65 (2001)

H. Bracht, N. A. Stolwijk, M. Laube, G. Pensl:
Modeling of Boron Diffusion in Silicon Carbide,
Mater. Sci. Forum 353-356, 327 (2001)

N. Schulze:
Near-Thermal-Equilibrium Growth of 4H-, 6H and 15R-Silicon Carbide Single Crystals, 121 (2001)

H. B. Weber, R. Häussler, H. v. Löhneysen, J. Kroha:
Non-equilibrium electronic transport and interaction in short metallic nanobridges,
Physical Review B 63, 165426 (2001)

O. Klettke, G. Pensl, T. Kimoto, H. Matsunami:
Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO2 Ambient,
Mater. Sci. Forum 353-356, 459 (2001)

H. Grünleitner, K. Semmelroth, M. Schulz:
Resistivity of ultrathin (0.6-3.7nm) IrSi films on Si(100),
phys. stat. sol. (a) 185, 429-439 (2001)

G. Pensl, D. Stephani, M. Hundhausen:
Silicon Carbide and Related Materials (ECSCRM 2000) 353-356, 833 (2001)

O. Schreer:
Silizidbildung in strombeheizten Dünnschichten, 101 (2001)

E. Kalinina, G. Kholujanov, A. Zubrilov, V. Solov'ev, D. Davydov, A. Tregubova, M. Sheglov, A. Kovarskii, M. Yagovkina, G. Violina, G. Pensl, A. Hallén, A. Konstantinov, S. Karlsson, S. Rendakova, V. Dmitriev:
Structural, electrical and optical properties of low-doped 4H-SiC chemical vapor deposited epitaxial layers,
J. Appl. Phys. 90, 5402 (2001)

G. Pensl, M. Baßler, F. Ciobanu, V. Afanas'ev, H. Yano, T. Kimoto, H. Matsunami:
Traps at the SiC/SiO_2_-Interface,
Mat. Res. Soc. Symp. Proc. 640, H3.2 (2001)

A. Kawasuso, F. Redmann, R. Krause-Rehberg, T. Frank, M. Weidner, G. Pensl, P. Sperr, H. Itoh:
Vacancies and deep levels in electron-irradiated 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy,
J. Appl. Phys. 90, 3377 (2001)

A. Kawasuso, M. Weidner, F. Redmann, T. Frank, P. Sperr, R. Krause-Rehberg, W. Triftshäuser, G. Pensl:
Vacancies in He-implanted 4H and 6H SiC epilayers studied by positron annihilation,
Physica B 308-310, 660 (2001)

2000

K. Christiansen:
Anisotropie des epitaktischen Wachstums und Aspekte der Oxidation von Siliziumkarbid, 102 (2000)

T. E. Schäffer, M. Richter, M. B. Viani:
Array Detector for the Atomic Force Microscope,
Appl. Phys. Letters 76, 3644-3646 (2000)

N. Schulze, D. Barrett, G. Pensl:
Controlled Growth of 15R-SiC Single Crystals by the Modified Lely Method,
phys. stat. sol. (a) 178, 645 (2000)

N. Schulze, D. Barrett, M. Weidner, G. Pensl:
Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely method,
Mater. Sci. Forum 338-342, 111 (2000)

T. Frank, G. Pensl, S. Bai, R. P. Devaty, W. J. Choyke:
Correlation between DLTS and Photoluminescence in He-implanted 6H-SiC,
Mater. Sci. Forum 338-342, 753 (2000)

A. Uedono, S. Tanigawa, T. Ohshima, H. Itoh, M. Yoshikawa, I. Nashiyama, T. Frank, G. Pensl, R. Suzuki, T. Ohdaira, T. Mikado:
Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams,
J. Appl. Phys. 87, 4119 (2000)

H. Bracht, N. A. Stolwijk, M. Laube, G. Pensl:
Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism,
Appl. Phys. Lett. 77, 3188 (2000)

M. Baßler:
Eigenschaften elektrisch aktiver Zustände an der Grenzfläche SiC/SiO_2_, 170 (2000)

J. Zettner:
Eigenschaften kristalliner Silizium-Dünnschicht Solarzellen auf SiC/Graphit Substraten, 151 (2000)

M. Baßler, V. Afanas'ev, G. Pensl, M. Schulz:
Electrically Active Traps at the 4H-SiC/SiO_2_ Interface Responsible for the Limitation of the Channel Mobility,
Mater. Sci. Forum 338-342, 1065 (2000)

C. Chen:
Electronic Transitions and Optical Properties of SiC, 154 (2000)

B. Pécz, O. Klettke, G. Pensl, J. Stoemenos:
Formation of Precipitates in 6H-SiC after Oxygen Implantation and Subsequent Annealing,
Mater. Sci. Forum 338-342, 961 (2000)

C. Häßler, H.-U. Höfs, G. Stollwerck, A. Müller, D. Karg, G. Pensl:
Formation and annihilation of oxygen donors in multicrystalline silicon for solar cells,
Mater. Sci. and Engineering B 71, 39 (2000)

M. Schulz, W. Gross, H. Scheuerpflug:
High-Resolution Thermophysical Measurements,
High Temp.-High Press. 32, 54 (2000)

S. Rohmfeld, M. Hundhausen, L. Ley, N. Schulze, G. Pensl:
Isotope Effects on the Raman Spectrum of SiC,
Mater. Sci. Forum 338-342, 579 (2000)

H. Sadowski, C. Peppermüller, N. Schulze, M. Laube, G. Pensl, R. Helbig:
Low Temperature Photoluminescence of 13C Enriched SiC-Crystals Grown by the Modified Lely method,
Mater. Sci. Forum 338-342, 623 (2000)

A. Chand, M. B. Viani, T. E. Schäffer, P. K. Hansma:
Microfabricated Small Metal Cantilevers with Silicon Tips for Atomic Force Microscopy,
Journal of Microelectromechanical Systems 9, 112-116 (2000)

H. Yano, T. Kimoto, H. Matsunami, M. Baßler, G. Pensl:
MOSFET Performance of 4H-, 6H- and 15R-SiC Processed by Dry and Wet Oxidation,
Mater. Sci. Forum 338-342, 1109 (2000)

D. Karg, G. Pensl, M. Schulz, C. Häßler, W. Koch:
Oxygen-Related Defect Centers in Solar-Grade, Multicrystalline Silicon: A Reservoir of Lifetime Killers,
phys. stat. sol. (b) 222, 379 (2000)

G. Pensl, V. Afanas'ev, M. Baßler, T. Frank, M. Weidner:
Physics of SiC Processing,
Mater. Sci. Forum 338-342, 831 (2000)

T. Ohshima, A. Uedono, H. Itoh, M. Yoshikawa, K. Kojima, S. Okada, I. Nashiyama, K. Abe, S. Tanigawa, T. Frank, G. Pensl:
Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-implanted with Phosphorus Ions,
Mater. Sci. Forum 338-342, 857 (2000)

V. Afanas'ev, A. Stesmans, M. Baßler, G. Pensl, M. Schulz:
Shallow electron traps at the 4H-SiC/SiO_2_ interface,
Appl. Phys. Lett. 76, 336 (2000)

S. Kasas, N. H. Thomson, T. E. Schäffer, G. Dietler, S. Catsicas, P. K. Hansma:
Simulation of an atomic force microscope imaging a moving protein,
Probe Microscopy 2, 37-44 (2000)

H. Iwata, K. M. Itoh, G. Pensl:
Theory of the anisotropy of the electron Hall mobility in n-type 4H- and 6H-SiC,
J. Appl. Phys. 88, 1956 (2000)

M. Laube, G. Pensl:
Transient-Enhanced Diffusion of Boron in SiC,
Mater. Sci. Forum 338-342, 941 (2000)

H. v. Löhneysen, C. Paschke, H. B. Weber, E. Scheer:
Universal conductance fluctuations in Cu : Mn nanocontacts,
Physica B 284, 1858 (2000)

R. Häussler, H. B. Weber, H. v. Löhneysen:
Voltage Dependence of the amplitude of Aharonov-Bohm,
Journal of Low Temperature Physics 118, 467 (2000)

1999

M. Schulz:
Bayerischer Forschungsverbund Solarenergie (FORSOL): Entwicklung von Dünnschicht-Solarmodulen, 42 (1999)

B. Pécz, T. Dalibor, G. Pensl, J. Stoemenos:
Comparison of defect formation in O+ -and Ne+-implanted 6H-SiC,
Inst. Phys. Conf. Ser. 164, 529 (1999)

M. Baßler, V. Afanas'ev, G. Pensl, M. Schulz:
Degradation of 6H-SiC MOS Capacitors Operated at High Temperatures,
Microelectronic Engineering 48, 257 (1999)

D. Karg:
Elektrische und optische Charakterisierung von Silicium-Solarzellen und Sauerstoff-korrelierten Defekten in Silicium, 172 (1999)

C. Adelmann, J. Hetzler, G. Scheiber, T. Schimmel, M. Wegener, H. B. Weber, H. v. Löhneysen:
Experiments on the depolarization near-field scanning optical microscope,
Applied Physics Letters 74, 179 (1999)

M. B. Viani, T. E. Schäffer, G. T. Paloczi, L. Pietrasanta, B. L. Smith, J. B. Thompson, M. Richter, M. Rief, H. E. Gaub., K. W. Plaxco, A. N. Cleland, H. G. Hansma, P. K. Hansma:
Fast imaging and fast force spectroscopy of single biopolymers with a new atomic force microscope designed for small cantilevers,
Review of Scientfic Instruments 70, 4300-4303 (1999)

D. Karg, A. Voigt, J. Krinke, C. Häßler, H.-U. Höfs, G. Pensl, M. Schulz, H. P. Strunk:
Formation and Annihilation of New Donors in Ribbon Growth on Substrate Silicon,
Solid State Phenomena 67-68, 33 (1999)

K.-M. Mahlein:
Herstellung und Untersuchung von Platinsilizid- und Iridiumsiliziddünnschichten auf Si(100) für Wärmebildkameras, 130 (1999)

W. Gross:
Infrarot-Bildaufnahme mit starrenden Detektormatrizen, 134 (1999)

M. Schulz, R. Brendel:
Insulating Films on Semiconductors 48, 447 (1999)

M. Baßler, G. Pensl:
Long-time constant-capacitance DLTS investigations of 6H-SiC/MOS structures: comparison of dry and wet oxidation,
Mater. Sci. Eng. B 61-62, 490 (1999)

B. L. Smith, T. E. Schäffer, M. B. Viani, J. B. Thompson, N. A. Frederick, J. Kindt, A. Belcher, G. D. Stucky, D. E. Morse, P. K. Hansma:
Molecular Mechanistic Origin of the Toughness of Natural Adhesives, Fibres and Composites,
Nature 399, 761-763 (1999)

N. Schulze, D. Barrett, G. Pensl, S. Rohmfeld, M. Hundhausen:
Near-thermal equilibrium growth of SiC by physical vapor transport,
Mat. Sci. Eng. 61-62, 44 (1999)

T. E. Schäffer:
Neue Kraftmikroskope mit Anwendung in der Biologie,
MPIbpc News 05/1999, 1-6 (1999)

C. Peppermüller:
Optische Emissionsspektroskopie an Siliziumkarbid-Kristallen, 116 (1999)

T. Dalibor, H. Trageser, G. Pensl, T. Kimoto, H. Matsunami, D. Nizhner, O. Shigiltchoff, W. Choyke:
Oxygen in silicon carbide: shallow donors and deep acceptors,
Mat. Sci. Eng. 61-62, 454 (1999)

V. Afanas'ev, A. Stesmans, M. Baßler, G. Pensl, M. Schulz, C. Harris:
SiC/SiO_2_ interface-state generation by electron injection,
J. Appl. Phys. 85, 8292 (1999)

M. B. Viani, T. E. Schäffer, A. Chand, M. Rief, H. E. Gaub, P. K. Hansma:
Small Cantilevers for Force Spectroscopy of Single Molecules,
Journal of Appl. Physics 86, 2258-2262 (1999)

M. Laube, G. Pensl, H. Itoh:
Suppressed diffusion of implanted boron in 4H-SiC,
Appl. Phys. Lett. 74, 2292 (1999)

M. Schulz:
The end of the road for Silicon,
Nature 399, 729 (1999)

T. Kinoshita, K. M. Itoh, M. Schadt, G. Pensl:
Theory of the electron mobility in n-type 6H-SiC,
J. Appl. Phys. 85, 8193 (1999)

H. B. Weber:
Zum nichtlinearen diffusiven elektronischen Transport in metallischen Nanobrücken (1999)

1998

P. K. Hansma, T. E. Schäffer, J. P. Cleveland:
Atomic Force Microscope for Generating a Small Incident Beam Spot (1998)

T. E. Schäffer, P. K. Hansma:
Characterization and Optimization of the Detection Sensitivity of an Atomic Force Microscope for Small Cantilevers,
Journal of Appl. Physics 84, 4661-4666 (1998)

T. E. Schäffer:
Physical Methods in Nanoscale Science with the Atomic Force Microscope (1998)

1997

T. E. Schäffer, M. B. Viani, D. A. Walters, B. Drake, E. K. Runge, J. P. Cleveland, M. A. Wendman, P. K. Hansma:
An Atomic Force Microscope for Small Cantilevers 3009, 48-52 (1997)

S. H. Tolbert, T. E. Schäffer, J. Feng, P. K. Hansma, G. D. Stucky:
A New Phase of Oriented Mesoporous Silicate Thin Films,
Chemistry of Materials 9, 1962-1967 (1997)

D. A. Walters, M. B. Viani, G. T. Paloczi, T. E. Schäffer, J. P. Cleveland, M. A. Wendman, G. Gurley, V. Elings, P. K. Hansma:
Atomic Force Microscopy using Small Cantilevers 3009, 43-47 (1997)

T. E. Schäffer, C. Ionescu-Zanetti, R. Proksch, M. Fritz, D. A. Walters, N. Almqvist, C. M. Zaremba, A. M. Belcher, B. L. Smith, G. D. Stucky, D. E. Morse, P. K. Hansma:
Does Abalone Nacre Form by Heteroepitaxial Nucleation or by Growth through Mineral Bridges?,
Chemistry of Materials 9, 1731-1740 (1997)

S. Manne, T. E. Schäffer, Q. Huo, P. K. Hansma, D. E. Morse, G. D. Stucky, I. A. Aksay:
Gemini Surfactants at Solid-Liquid Interfaces: Control of Interfacial Aggregate Geometry,
Langmuir 13, 6382-6387 (1997)

1996

T. E. Schäffer, J. P. Cleveland, F. Ohnesorge, D. A. Walters, P. K. Hansma:
Studies of Vibrating Atomic Force Microscope Cantilevers in Liquid,
Journal of Appl. Physics 80, 3622-3627 (1996)

1995

J. Shi, J. M. Kikkawa, R. Proksch, T. E. Schäffer, D. D. Awschalom, G. Medeiros-Ribeiro, P. M. Petroff:
Assembly of Submicrometre Ferromagnets in Gallium Arsenide Semiconductors,
Nature 377, 707-710 (1995)

R. Proksch, T. E. Schäffer, B. M. Moskowitz, E. D. Dahlberg, D. A. Bazylinsky, R. B. Frankel:
Magnetic Force Microscopy of the Submicron Magnetic Assembly in a Magnetotactic Bacterium,
Appl. Phys. Letters 66, 2582-2584 (1995)

J. P. Cleveland, T. E. Schäffer, P. K. Hansma:
Measuring Intermolecular Forces using Thermal Noise in an Atomic Force Microscope, 724-725 (1995)

J. P. Cleveland, T. E. Schäffer, P. K. Hansma:
Probing Oscillatory Hydration Potentials using Thermal-Mechanical Noise in an Atomic Force Microscope,
Physical Review B: Rapid Communications 52, 8692-8695 (1995)

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